Full counting statistics for a single-electron transistor: nonequilibrium effects at intermediate conductance.
نویسندگان
چکیده
We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation, we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.
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عنوان ژورنال:
- Physical review letters
دوره 96 8 شماره
صفحات -
تاریخ انتشار 2006